ADVANCES IN FABRICATION TECHNIQUES OF EPITAXIAL SILICON P-N STRUCTURES FOR THERMOELECTRIC APPLICATIONS

Authors

  • F. Arzikulov Assistant of Biomedical Engineering Informatics, Biophysics Department Tashkent Medical Academy, Tashkent Uzbekistan
  • Sh. Kuchkanov Associate Professor of the Department of Alternative Energy Sources (PhD), Tashkent State Technical University named after Islam Karimov, Tashkent Uzbekistan.

Keywords:

Epitaxial silicon, p-n junction, thermoelectric applications, molecular beam epitaxy (MBE), chemical vapor deposition (CVD), atomic layer deposition (ALD), ion-stimulated vacuum deposition (ISVD), ion treatment, energy harvesting, waste heat recovery.

Abstract

This article explores recent advances in fabrication techniques for silicon-based epitaxial p-n junctions, focusing on the role of molecular beam epitaxy (MBE), chemical vapor deposition (CVD), and atomic layer deposition (ALD). These techniques allow for precise control of doping concentrations, layer thicknesses, and interface quality, leading to improved thermoelectric efficiency. Additionally, the article discusses the challenges of minimizing thermal conductivity while maximizing electrical conductivity, aiming to optimize the thermoelectric figure of merit (ZT).

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Published

2024-09-27

Issue

Vol. 28 (2024)

Section

Articles

License

Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.

How to Cite

ADVANCES IN FABRICATION TECHNIQUES OF EPITAXIAL SILICON P-N STRUCTURES FOR THERMOELECTRIC APPLICATIONS. (2024). American Journal of Technology and Applied Sciences, 28, 22-25. https://americanjournal.org/index.php/ajtas/article/view/2341