INFLUENCE ON PHOTOELECTRIC PARAMETERS OF NON-UNIFORM LIGHT ABSORPTION IN STRUCTURES BASED ON a-Si:H

Authors

  • U. Bobokhodzhaev
  • M. Usmanov Namangan State University
  • A. Botirjonov Namangan State University

Keywords:

Hydrogenated Amorphous Silicon(a-Si:H), target of Vidicon, tails of Conductive and Valence zones,State density, gap mobility.

Abstract

In this manuscript gives the conclusion of an analytical expression that determines the dependence of the height of the potential barrier, which is obtained upon unevenly light absorption of over the thickness of the i-layer in the target of video with n-i-p structures based on a-Si:H, on the light intensity. In addition, it is investigated that the dependence of the width of space charge region (SCR) on certain features of a-Si:H .

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Published

2023-07-07

Issue

Vol. 14 (2023)

Section

Articles

License

Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.

How to Cite

INFLUENCE ON PHOTOELECTRIC PARAMETERS OF NON-UNIFORM LIGHT ABSORPTION IN STRUCTURES BASED ON a-Si:H. (2023). American Journal of Technology and Applied Sciences, 14, 10-15. https://americanjournal.org/index.php/ajtas/article/view/1046