THE MECHANISM OF HOLE TRANSPORT IN PHOTOCELLS BASED ON a-Si: H.

Authors

  • S. Zaynobidinov Andijan State University, Andijan , Uzbekistan.
  • U. Babakhodzhayev Namangan State University, Namangan, Uzbekistan.
  • A. Nabiyev Namangan State University, Namangan, Uzbekistan.

Keywords:

Amorphous hydrogenated silicon, vidicon target, hole trap, energy positions of traps, mobility gap, sticking centers.

Abstract

Investigate the hole transfer mechanism in a-Si:H films using photovoltage characteristics (photo-CVCH) of a vidicon target.
Theoretically obtained, if the concentration of photogenerated injected holes exceeds the concentration of defective states, then in the a-Si: H mobility gap in photo-CVCH, a portion is observed that obeys the quadratic law (I ~ U2). It was explained that in order to obtain reliable information from this section on the hole transport mechanism, it is necessary to take into account changes in the a-Si: H dielectric constant and hole lifetime depending on the applied voltage.

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Published

2023-07-07

Issue

Vol. 14 (2023)

Section

Articles

License

Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.

How to Cite

THE MECHANISM OF HOLE TRANSPORT IN PHOTOCELLS BASED ON a-Si: H. (2023). American Journal of Technology and Applied Sciences, 14, 1-9. https://americanjournal.org/index.php/ajtas/article/view/1045