STUDY OF PHOTODIODE STRUCTURES IN THE GALLIUM ARSENIDE-CADMIUM SULFIDE SYSTEM

Gaibov A. G.; Mirkamilova M. S.; Juraev U. E.

STUDY OF PHOTODIODE STRUCTURES IN THE GALLIUM ARSENIDE-CADMIUM SULFIDE SYSTEM

Authors

Gaibov A. G.
Mirkamilova M. S.
Juraev U. E. Tashkent State Technical University

Keywords:

Photosensitiveity, gallium arsenide, double-barrier structure, saturation currents, current-voltage characteristic.

Abstract

It is shown in this work that in a two barrier photodiode structure with a common modulated base region, the spectral characteristics for the cases of blockable p-n-hetero- (pGaAs-nCdS) and metal-semiconductor (m-pGaAs) junctions can have an identical form, where the formation mechanism is determined by the processes, occurring in the space charge regions located mainly in the common (pGaAs) region.

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Published

2024-05-31

Issue

Vol. 24 (2024)

Section

Articles

License

This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.

How to Cite

STUDY OF PHOTODIODE STRUCTURES IN THE GALLIUM ARSENIDE-CADMIUM SULFIDE SYSTEM. (2024). American Journal of Pedagogical and Educational Research, 24, 117-120. https://americanjournal.org/index.php/ajper/article/view/2155